Characterization of GaAs Nanoparticles by Laser Ablation Dispersed in Acetone

Abstract

This paper demonstrates the optical band gap and optical constants of
Gallium arsenide GaAs nanoparticles through laser ablation into
liquids LAL technique from a solid GaAs target immersed in acetone
by irradiating using Nd Pulsed: YAG laser works at 64 = 1064 nm
(HUAFEI type), 7ns pulse width and 10Hz frequency. The laser flow
used for ablation was fixed at 1.32 J/ cm2 and the ablation time was
5min. The band gap energy is calculated by generating GaAs particles
immersed in the acetone via the touch method to be 3.8EV, which is
greater than the band gap energy of bulk GaAs. The optical constants
of the GaAs submerged in acetone were made in the UV/ Visible
region (300-1200nm). It has been found that transmission spectra are
increasing by increasing wavelength, while optical absorption
coefficients, extinction coefficient and refractive coefficient decrease.
The stability of acetone was studied using the Z-Scan Brookhaven
Instruments Corporation Holtsville, NY 11742 US to measure the
potential of the Z for GaAs particles drilled in acetone. The Zpotential was calculated using an approximation such as the
Smoluchowski formula.